Growth of complex semiconductors presents challenges that can have a high impact on state-of-the-art device performance. Here we study how elemental segregation in III-V random alloys can shed light on their growth kinetics. InGaAs grown on an InP substrate, under non-optimal conditions, results in anti-clustering of In with respect to Ga and As, as demonstrated in the two-dimensional compositional contour analyses. This information can be used to optimize growth conditions for these and other semiconductor alloys.